JPH0418658U - - Google Patents

Info

Publication number
JPH0418658U
JPH0418658U JP5988490U JP5988490U JPH0418658U JP H0418658 U JPH0418658 U JP H0418658U JP 5988490 U JP5988490 U JP 5988490U JP 5988490 U JP5988490 U JP 5988490U JP H0418658 U JPH0418658 U JP H0418658U
Authority
JP
Japan
Prior art keywords
sample
chamber
plasma processing
heat treatment
processing apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5988490U
Other languages
English (en)
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP5988490U priority Critical patent/JPH0418658U/ja
Publication of JPH0418658U publication Critical patent/JPH0418658U/ja
Pending legal-status Critical Current

Links

Landscapes

  • Chemical Vapour Deposition (AREA)
  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)
JP5988490U 1990-06-06 1990-06-06 Pending JPH0418658U (en])

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5988490U JPH0418658U (en]) 1990-06-06 1990-06-06

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5988490U JPH0418658U (en]) 1990-06-06 1990-06-06

Publications (1)

Publication Number Publication Date
JPH0418658U true JPH0418658U (en]) 1992-02-17

Family

ID=31586776

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5988490U Pending JPH0418658U (en]) 1990-06-06 1990-06-06

Country Status (1)

Country Link
JP (1) JPH0418658U (en])

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05315359A (ja) * 1992-05-06 1993-11-26 Casio Comput Co Ltd 薄膜トランジスタ構成膜の成膜方法及び成膜装置
JP2010135849A (ja) * 2003-06-24 2010-06-17 Tokyo Electron Ltd 被処理体処理装置の圧力制御方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6360529A (ja) * 1986-09-01 1988-03-16 Hitachi Ltd プラズマ処理方法
JPH01104773A (ja) * 1987-10-14 1989-04-21 Sumitomo Electric Ind Ltd 被覆切削工具
JPH01313934A (ja) * 1988-06-14 1989-12-19 Matsushita Electric Ind Co Ltd プラズマエッチング装置及びその方法
JPH02247384A (ja) * 1989-03-20 1990-10-03 Sony Corp Cvd方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6360529A (ja) * 1986-09-01 1988-03-16 Hitachi Ltd プラズマ処理方法
JPH01104773A (ja) * 1987-10-14 1989-04-21 Sumitomo Electric Ind Ltd 被覆切削工具
JPH01313934A (ja) * 1988-06-14 1989-12-19 Matsushita Electric Ind Co Ltd プラズマエッチング装置及びその方法
JPH02247384A (ja) * 1989-03-20 1990-10-03 Sony Corp Cvd方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05315359A (ja) * 1992-05-06 1993-11-26 Casio Comput Co Ltd 薄膜トランジスタ構成膜の成膜方法及び成膜装置
JP2010135849A (ja) * 2003-06-24 2010-06-17 Tokyo Electron Ltd 被処理体処理装置の圧力制御方法

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